Detailed Product Description
1. DDR 333MHz, 400MHz. 128M unto 1GB
2. 184-pin socket type dual in line memory module (DIMM)
3. 2.6V power supply
4. Data rate: 667Mbps (max. )
5. 2.5 V (SSTL-2 compatible) I/O
6. Double data rate architecture, two data transfers per clock
7. Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
8. Data inputs and outputs are synchronized with DQS
9. DQS is edge aligned with data for read, center aligned with data for write
10. Differential clock inputs (CK and CK)
11. DLL aligns DQ and DQS transitions with CK transitions
12. Commands entered on each positive CK edge, data referenced to both edges of DQS
13. Auto precharge option for each burst access
14. Programmable burst length: 2, 4, 8
15. Programmable/CAS latency (CL): 3
16. Programmable output driver strength: Normal/weak
17. Refresh cycles: (8192 refresh cycles/64ms)
18. 7.8US maximum average periodic refresh interval
19. 2 variations of refresh
20. Auto refresh
21. Self refresh
| Place of Origin: | Guangdong in China |
| Model No: | DDR |
| Payment Terms: | T/T(Bank Transfer),Western Union, |
| Delivery Time: | 3 |