CNBM (Chengdu) Optoelectronic Materials Co., Ltd.| Manufacturer

CNBM (Chengdu) Optoelectronic Materials Co., Ltd.

[ Sichuan, China ]
Business Type: Manufacturer
Brand(s): CNBM
Main Product: Tellurium, Selenium, Indium, Antimony, Cdte, Solar Modules, Bismuth, Sulfur
Year Established: 2009
Employ Number: 101 - 500 People
Annual Sales Volume: US$5 Million - US$10 Million
  • Onsite operations checked and legal status confirmed
CNBM (Chengdu) Optoelectronic Materials Co., Ltd.

China Manufacturer with main products: Tellurium, Selenium, Indium, Antimony, Cdte, Solar Modules, Bismuth, Sulfur

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Indium

Supply Ability: 2,000 Kilogram/Kilograms per Month
Payment Terms: T/T
Export Markets: North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Place of Origin: Sichuan in China
Packaging Details: vacuum packing

Specifications

Indium (In) Indium Ingot ;Indium Powder ,Indium Granule 
Technic:Electrolysis-Vacuum smelting: removal of low melting point impurities.(S,Se,Pb,Cd,As,Hg,P )
Analysis :ICP-MS or GDMS.
Service :Supply MSDS ,Free sample;Provide Solutions for Material Application.
 
1, Physical character: 
Atomic Weight: 114.818
Electronegative: 1.78
Density: ρ=7.31 g·cm?3 (0-100℃)
Melting Point: 156.5985 ℃ 
Boiling Point: 2072 ℃ 
2, Specification: 
High Purity Indium: 
In-04 Grade 99.99. The content of Indium is above 99.99%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 100 ppm; 
In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm; 
Uitra Purity Indium:
In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm; 
Uitra High Purity Indium:
In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm; 
3, Physical Size: 
Virgulate, Ingot, Granule.
4, Usage: 
It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.
5, Packing: 
It is packed with dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule. 

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